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Photoinduced stress in a ZnSe/GaAs epilayer containing 90°α partial dislocations
http://hdl.handle.net/10097/47036
http://hdl.handle.net/10097/4703645e47d48-0de8-441b-b174-90d747b2df5c
名前 / ファイル | ライセンス | アクション |
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ApplPhysLett_87_181909.pdf (261.1 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2010-04-21 | |||||
タイトル | ||||||
タイトル | Photoinduced stress in a ZnSe/GaAs epilayer containing 90°α partial dislocations | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Ohno, Yutaka
× Ohno, Yutaka |
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著者別名 | ||||||
姓名 | 大野, 裕 | |||||
書誌情報 |
Applied Physics Letters 巻 87, 号 18, p. 181909-1-181909-3, 発行日 2005 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0003-6951 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1063/1.2123392 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
出版者 | ||||||
出版者 | American Institute of Physics | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | 学術論文 (Article) | |||||
登録日 | ||||||
日付 | 2010-04-21 | |||||
日付タイプ | Created | |||||
公開日(投稿完了日) | ||||||
日付 | 2010-04-21 | |||||
日付タイプ | Created | |||||
発行日 | ||||||
日付 | 2005 | |||||
日付タイプ | Created | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | 261113 bytes | |||||
公開範囲 | ||||||
値 | 学外 | |||||
大学情報DB画面区分 | ||||||
値 | K020 | |||||
大学情報DBリンク番号 | ||||||
254307 | ||||||
大学情報DBリポジトリ区分 | ||||||
値 | 許諾 | |||||
更新日 | ||||||
日付 | 2010-04-21 | |||||
日付タイプ | Created |