@article{oai:tohoku.repo.nii.ac.jp:00047249,
 author = {Xue, Qi-kun and Hasegawa, Yukio and Ogino, Tsuyoshi and Kiyama, Hisashi and Sakurai, Toshio},
 issue = {2},
 journal = {Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy},
 month = {Mar},
 note = {application/pdf, Molecular beam epitaxy (MBE) of the lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED). We found that deposition of submonolayer (?0.6ML) In on the GaAs(001)-As-rich 2x4-β surface could result in a new 4x2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs grows two-dimensionally and the commonly observed three-dimensional islanding is completely surpressed. The atomic structure for this new 4x2 reconstruction is discussed on the basis of voltage-dependent STM images. In addition, a "domain wall" structure is discussed, representing a new type of strain relief mechanism in the layer-by-layer growth reported here., 紀要類(bulletin), 1140721 bytes},
 pages = {153--156},
 title = {Indium-rich 4x2 Reconstruction in Novel Growth of InAs on the GaAs(001)(STM-BEEM interfaces)},
 volume = {44},
 year = {1997}
}