{"created":"2023-07-27T04:46:40.032338+00:00","id":47249,"links":{},"metadata":{"_buckets":{"deposit":"a3b9d38e-c925-4182-a2c8-3a5fceb26e8e"},"_deposit":{"created_by":3,"id":"47249","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"47249"},"status":"published"},"_oai":{"id":"oai:tohoku.repo.nii.ac.jp:00047249","sets":["76:267"]},"author_link":["111533","111532","111531","111529","111530"],"item_4_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-03-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"156","bibliographicPageStart":"153","bibliographicVolumeNumber":"44","bibliographic_titles":[{"bibliographic_title":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy"}]}]},"item_4_date_62":{"attribute_name":"登録日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-05-02","subitem_date_issued_type":"Created"}]},"item_4_date_63":{"attribute_name":"公開日（投稿完了日）","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-05-02","subitem_date_issued_type":"Created"}]},"item_4_date_65":{"attribute_name":"発行日","attribute_value_mlt":[{"subitem_date_issued_datetime":"1997-03-31","subitem_date_issued_type":"Created"}]},"item_4_date_80":{"attribute_name":"更新日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2010-01-27","subitem_date_issued_type":"Created"}]},"item_4_description_15":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_4_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Molecular beam epitaxy (MBE) of the lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED). We found that deposition of submonolayer (?0.6ML) In on the GaAs(001)-As-rich 2x4-β surface could result in a new 4x2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs grows two-dimensionally and the commonly observed three-dimensional islanding is completely surpressed. The atomic structure for this new 4x2 reconstruction is discussed on the basis of voltage-dependent STM images. In addition, a \"domain wall\" structure is discussed, representing a new type of strain relief mechanism in the layer-by-layer growth reported here.","subitem_description_type":"Abstract"}]},"item_4_description_41":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"紀要類(bulletin)","subitem_description_type":"Other"}]},"item_4_description_66":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"1140721 bytes","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.50974/00043812","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_34":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Tohoku University"}]},"item_4_radio_69":{"attribute_name":"公開範囲","attribute_value_mlt":[{"subitem_radio_item":"学外"}]},"item_4_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00408808","subitem_source_identifier_type":"ISSN"}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00836167","subitem_source_identifier_type":"NCID"}]},"item_4_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Xue, Qi-kun"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hasegawa, Yukio"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ogino, Tsuyoshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kiyama, Hisashi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sakurai, Toshio"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-16"}],"displaytype":"detail","filename":"KJ00004200848.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004200848.pdf","url":"https://tohoku.repo.nii.ac.jp/record/47249/files/KJ00004200848.pdf"},"version_id":"31eeb3b7-522d-4f65-b66b-931102639076"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"molecular beam epitaxy","subitem_subject_scheme":"Other"},{"subitem_subject":"scanning tunneling microscopy","subitem_subject_scheme":"Other"},{"subitem_subject":"heterojunction","subitem_subject_scheme":"Other"},{"subitem_subject":"InAs","subitem_subject_scheme":"Other"},{"subitem_subject":"GaAs","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Indium-rich 4x2 Reconstruction in Novel Growth of InAs on the GaAs(001)(STM-BEEM interfaces)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Indium-rich 4x2 Reconstruction in Novel Growth of InAs on the GaAs(001)(STM-BEEM interfaces)"}]},"item_type_id":"4","owner":"3","path":["267"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-05-02"},"publish_date":"2008-05-02","publish_status":"0","recid":"47249","relation_version_is_last":true,"title":["Indium-rich 4x2 Reconstruction in Novel Growth of InAs on the GaAs(001)(STM-BEEM interfaces)"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T13:30:16.787255+00:00"}