{"created":"2023-07-27T04:46:40.289229+00:00","id":47255,"links":{},"metadata":{"_buckets":{"deposit":"68fe4749-43ce-48fb-b062-703d73a1859c"},"_deposit":{"created_by":3,"id":"47255","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"47255"},"status":"published"},"_oai":{"id":"oai:tohoku.repo.nii.ac.jp:00047255","sets":["76:267"]},"author_link":["111543"],"item_4_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-03-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"199","bibliographicPageStart":"195","bibliographicVolumeNumber":"44","bibliographic_titles":[{"bibliographic_title":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy"}]}]},"item_4_date_62":{"attribute_name":"登録日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-05-02","subitem_date_issued_type":"Created"}]},"item_4_date_63":{"attribute_name":"公開日（投稿完了日）","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-05-02","subitem_date_issued_type":"Created"}]},"item_4_date_65":{"attribute_name":"発行日","attribute_value_mlt":[{"subitem_date_issued_datetime":"1997-03-31","subitem_date_issued_type":"Created"}]},"item_4_date_80":{"attribute_name":"更新日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2010-01-27","subitem_date_issued_type":"Created"}]},"item_4_description_15":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_4_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Semiconductor interface structures have been studied by employing the technique of grazing incidence X-ray diffraction (GID) with the use of synchrotron radiation. Multiple-wavelength anomalous dispersion (MAD) method, a powerful direct method, has been modified and applied for the first time to an interface. This allows us to separate heavy and light atoms in a model-independent fashion and so deduce the structure. Of the numerous √<3> structures, only boron induced √<3> structure has been observed in the buried interface. MAD method has been applied to the Si/B√<3>/GeSi(111) interface structure and direct evidence for ordering of the Ge and Si atoms at this interface has been obtained. Specially, it has been found that boron lies in a substitutional site surrounded by four nearest-neighbor Si atoms with Ge in the other sites. In order to study the stress at the SiO_2/Si interface, the X-ray intensity of the silicon substrate 311 reflection in an extremely asymmetric scheme of small incident angle and large exit angle has been measured for various silicon oxide thickness. X-ray rocking curve studies reveal that silicon substrate lattice is highly stressed even in the thin-SiO_2/Si interface.","subitem_description_type":"Abstract"}]},"item_4_description_41":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"紀要類(bulletin)","subitem_description_type":"Other"}]},"item_4_description_66":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"523508 bytes","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.50974/00043818","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_34":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Tohoku University"}]},"item_4_radio_69":{"attribute_name":"公開範囲","attribute_value_mlt":[{"subitem_radio_item":"学外"}]},"item_4_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00408808","subitem_source_identifier_type":"ISSN"}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00836167","subitem_source_identifier_type":"NCID"}]},"item_4_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Akimoto, Koichi"}],"nameIdentifiers":[{"nameIdentifier":"111543","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-16"}],"displaytype":"detail","filename":"KJ00004200855.pdf","filesize":[{"value":"523.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004200855.pdf","url":"https://tohoku.repo.nii.ac.jp/record/47255/files/KJ00004200855.pdf"},"version_id":"177627cf-8ccd-4c99-b438-7c8b59771f28"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"X-ray diffraction","subitem_subject_scheme":"Other"},{"subitem_subject":"interface","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Semiconductor Interface Structure Studied by X-Ray Diffraction(Interfaces by various techniques)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Semiconductor Interface Structure Studied by X-Ray Diffraction(Interfaces by various techniques)"}]},"item_type_id":"4","owner":"3","path":["267"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-05-02"},"publish_date":"2008-05-02","publish_status":"0","recid":"47255","relation_version_is_last":true,"title":["Semiconductor Interface Structure Studied by X-Ray Diffraction(Interfaces by various techniques)"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T15:16:02.539687+00:00"}