@article{oai:tohoku.repo.nii.ac.jp:00047825,
 author = {El Fatimy, A. and Dyakonova, N. and Meziani, Y. and Otsuji, T. and Knap, W. and Vandenbrouk, S. and Madjour, K. and Theron,  D. and Gaquiere, C. and Poisson, M. A. and Delage, S. and Prystawko, P. and Skierbiszewski, C.},
 issue = {2},
 journal = {Journal of Applied Physics},
 month = {},
 note = {学術論文 (Article)},
 title = {AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources},
 volume = {107},
 year = {2010}
}