{"created":"2023-07-27T04:48:28.356430+00:00","id":49633,"links":{},"metadata":{"_buckets":{"deposit":"33113dd9-6c99-4cd7-8dd6-e3909881c6b0"},"_deposit":{"created_by":3,"id":"49633","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"49633"},"status":"published"},"_oai":{"id":"oai:tohoku.repo.nii.ac.jp:00049633","sets":["72:290"]},"author_link":["120208","120212","120206","120210","120211","120205","120214","120209","120213","120207"],"item_4_alternative_title_20":{"attribute_name":"その他の言語のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"<Original Paper>Evaluation of Crystallinity in the Si Epitaxial Layer by Nano-Area Characterization System"}]},"item_4_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-03-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1/2","bibliographicPageEnd":"45","bibliographicPageStart":"39","bibliographicVolumeNumber":"56","bibliographic_titles":[{"bibliographic_title":"東北大学素材工学研究所彙報"},{"bibliographic_title":"Bulletin of the Institute for Advanced Materials Processing, Tohoku University","bibliographic_titleLang":"en"}]}]},"item_4_date_62":{"attribute_name":"登録日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-05-02","subitem_date_issued_type":"Created"}]},"item_4_date_63":{"attribute_name":"公開日（投稿完了日）","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-05-02","subitem_date_issued_type":"Created"}]},"item_4_date_65":{"attribute_name":"発行日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2001-03-01","subitem_date_issued_type":"Created"}]},"item_4_date_80":{"attribute_name":"更新日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2010-01-27","subitem_date_issued_type":"Created"}]},"item_4_description_15":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_4_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In order to evaluate the crystallinity of the Si epitaxial layer on a recently developed 400mm diameter wafer, detailed transmisson electron microscopic observations were carried out, using specimens with the following growth conditions; growth temperature at 900℃, the H_2 gas flow rate of 80slm and the SiH_4 gas flow rate of 300sccm. V-shaped micro defects, which basically consisted of stacking faults and micro twins, were observed in the epitaxial layer. The morphology and distribution of the defects depended on the positions on the wafer, i. e. the distance from the wafer edge. Mechanisms of defect formation are briefly discussed.","subitem_description_type":"Abstract"}]},"item_4_description_41":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"紀要類(bulletin)","subitem_description_type":"Other"}]},"item_4_description_66":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"526847 bytes","subitem_description_type":"Other"}]},"item_4_full_name_2":{"attribute_name":"著者(ヨミ)","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"120210","nameIdentifierScheme":"WEKO"}],"names":[{"name":"OHASHI, Yoshimasa"}]},{"nameIdentifiers":[{"nameIdentifier":"120211","nameIdentifierScheme":"WEKO"}],"names":[{"name":"MURAKAMI, Yasukazu"}]},{"nameIdentifiers":[{"nameIdentifier":"120212","nameIdentifierScheme":"WEKO"}],"names":[{"name":"IKEMATSU, Yoichi"}]},{"nameIdentifiers":[{"nameIdentifier":"120213","nameIdentifierScheme":"WEKO"}],"names":[{"name":"SHINDO, Daisuke"}]},{"nameIdentifiers":[{"nameIdentifier":"120214","nameIdentifierScheme":"WEKO"}],"names":[{"name":"IMAI, Masato"}]}]},"item_4_publisher_34":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"東北大学素材工学研究所"}]},"item_4_radio_69":{"attribute_name":"公開範囲","attribute_value_mlt":[{"subitem_radio_item":"学外"}]},"item_4_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09194827","subitem_source_identifier_type":"ISSN"}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10405196","subitem_source_identifier_type":"NCID"}]},"item_4_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"大橋, 嘉公"}],"nameIdentifiers":[{"nameIdentifier":"120205","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"村上, 恭和"}],"nameIdentifiers":[{"nameIdentifier":"120206","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"池松, 陽一"}],"nameIdentifiers":[{"nameIdentifier":"120207","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"進藤, 大輔"}],"nameIdentifiers":[{"nameIdentifier":"120208","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"今井, 正人"}],"nameIdentifiers":[{"nameIdentifier":"120209","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-20"}],"displaytype":"detail","filename":"KJ00000659759.pdf","filesize":[{"value":"526.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00000659759.pdf","url":"https://tohoku.repo.nii.ac.jp/record/49633/files/KJ00000659759.pdf"},"version_id":"58c697f2-3e8e-4dfc-bbe0-c53c16cf9677"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"transmission electron microscopy","subitem_subject_scheme":"Other"},{"subitem_subject":"Si wafer","subitem_subject_scheme":"Other"},{"subitem_subject":"epitaxial growth","subitem_subject_scheme":"Other"},{"subitem_subject":"lattice defect","subitem_subject_scheme":"Other"},{"subitem_subject":"electron diffraction","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"<報文>ナノエリア解析システムによる Si エピタキシャル層の結晶性評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"<報文>ナノエリア解析システムによる Si エピタキシャル層の結晶性評価"}]},"item_type_id":"4","owner":"3","path":["290"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-05-02"},"publish_date":"2008-05-02","publish_status":"0","recid":"49633","relation_version_is_last":true,"title":["<報文>ナノエリア解析システムによる Si エピタキシャル層の結晶性評価"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T21:38:52.267158+00:00"}