@article{oai:tohoku.repo.nii.ac.jp:00049743,
 author = {山田, 高広 and 山根, 久典},
 issue = {1/2},
 journal = {東北大学多元物質科学研究所素材工学研究彙報},
 month = {Mar},
 note = {application/pdf, GaN single crystals were grown by heating a Ga melt in Na vapor at 720-800℃ and 5MPa of N_2 for 8-200h. The Ga melt absorbed Na from the vapor and formed a Na-Ga melt. Transparent prismatic GaN single crystals grew spontaneously from the wall of a boron nitride crucible in the melt. The size of the prismatic GaN single crystals obtained at 800℃ was 1.0-3.0mm long and 0.3-1.0mm wide. Full-width at half maximum (FWHM) of the X-ray rocking curve measured for (10.0) reflection of prismatic crystals was 24 arcsec. Seeded growth of GaN single crystals was performed at 780℃ and N_2 pressure of 5MPa by the Na flux method with Na vapor. Transparent crystals were grown on prismatic GaN seed crystals in a Na-Ga melt with a low Na fraction, in which spontaneous nucleation of GaN was inhibited. The thickness of the crystals grown on the seeds by heating for 400 h was approximately 150μm in the directions perpendicular to the prismatic and pyramidal planes, implying the growth rate of 0.4μm/h at least., 紀要類 (bulletin), 報文, Original Paper, 1077718 bytes},
 pages = {6--12},
 title = {Na蒸気を利用したNaフラックス法によるGaN単結晶の育成},
 volume = {63},
 year = {2008}
}