{"created":"2023-07-27T04:48:33.071399+00:00","id":49743,"links":{},"metadata":{"_buckets":{"deposit":"e8a1f5ab-7be0-4930-9b92-9538919e595b"},"_deposit":{"created_by":3,"id":"49743","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"49743"},"status":"published"},"_oai":{"id":"oai:tohoku.repo.nii.ac.jp:00049743","sets":["72:291"]},"author_link":["120897","120898","120899","120896"],"item_4_alternative_title_20":{"attribute_name":"その他の言語のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Crystal Growth of GaN by the Na Flux Method Using Na Vapor"}]},"item_4_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-03-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1/2","bibliographicPageEnd":"12","bibliographicPageStart":"6","bibliographicVolumeNumber":"63","bibliographic_titles":[{"bibliographic_title":"東北大学多元物質科学研究所素材工学研究彙報"}]}]},"item_4_date_62":{"attribute_name":"登録日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2010-02-05","subitem_date_issued_type":"Created"}]},"item_4_date_63":{"attribute_name":"公開日（投稿完了日）","attribute_value_mlt":[{"subitem_date_issued_datetime":"2010-02-05","subitem_date_issued_type":"Created"}]},"item_4_date_65":{"attribute_name":"発行日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-03-01","subitem_date_issued_type":"Created"}]},"item_4_date_80":{"attribute_name":"更新日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2010-05-25","subitem_date_issued_type":"Created"}]},"item_4_description_15":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_4_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"GaN single crystals were grown by heating a Ga melt in Na vapor at 720-800℃ and 5MPa of N_2 for 8-200h. The Ga melt absorbed Na from the vapor and formed a Na-Ga melt. Transparent prismatic GaN single crystals grew spontaneously from the wall of a boron nitride crucible in the melt. The size of the prismatic GaN single crystals obtained at 800℃ was 1.0-3.0mm long and 0.3-1.0mm wide. Full-width at half maximum (FWHM) of the X-ray rocking curve measured for (10.0) reflection of prismatic crystals was 24 arcsec. Seeded growth of GaN single crystals was performed at 780℃ and N_2 pressure of 5MPa by the Na flux method with Na vapor. Transparent crystals were grown on prismatic GaN seed crystals in a Na-Ga melt with a low Na fraction, in which spontaneous nucleation of GaN was inhibited. The thickness of the crystals grown on the seeds by heating for 400 h was approximately 150μm in the directions perpendicular to the prismatic and pyramidal planes, implying the growth rate of 0.4μm/h at least.","subitem_description_type":"Abstract"}]},"item_4_description_41":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"紀要類 (bulletin)","subitem_description_type":"Other"}]},"item_4_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"報文","subitem_description_type":"Other"},{"subitem_description":"Original Paper","subitem_description_type":"Other"}]},"item_4_description_66":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"1077718 bytes","subitem_description_type":"Other"}]},"item_4_full_name_2":{"attribute_name":"著者(ヨミ)","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"120898","nameIdentifierScheme":"WEKO"}],"names":[{"name":"YAMADA, TAKAHIRO"}]},{"nameIdentifiers":[{"nameIdentifier":"120899","nameIdentifierScheme":"WEKO"}],"names":[{"name":"YAMANE, HISANORI"}]}]},"item_4_publisher_34":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"東北大学多元物質科学研究所素材工学研究棟"}]},"item_4_radio_69":{"attribute_name":"公開範囲","attribute_value_mlt":[{"subitem_radio_item":"学外"}]},"item_4_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1348-4052","subitem_source_identifier_type":"ISSN"}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11795764","subitem_source_identifier_type":"NCID"}]},"item_4_text_72":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東北大学多元物質科学研究所 / 東北大学多元物質科学研究所"}]},"item_4_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"山田, 高広"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"山根, 久典"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-20"}],"displaytype":"detail","filename":"KJ00005127605.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00005127605.pdf","url":"https://tohoku.repo.nii.ac.jp/record/49743/files/KJ00005127605.pdf"},"version_id":"845dbbaf-077b-4db3-b34d-487d38e31b03"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"GaN","subitem_subject_scheme":"Other"},{"subitem_subject":"Crystal growth","subitem_subject_scheme":"Other"},{"subitem_subject":"seeded growth","subitem_subject_scheme":"Other"},{"subitem_subject":"Na flux method","subitem_subject_scheme":"Other"},{"subitem_subject":"Na vapor","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Na蒸気を利用したNaフラックス法によるGaN単結晶の育成","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Na蒸気を利用したNaフラックス法によるGaN単結晶の育成"}]},"item_type_id":"4","owner":"3","path":["291"],"pubdate":{"attribute_name":"公開日","attribute_value":"2010-02-05"},"publish_date":"2010-02-05","publish_status":"0","recid":"49743","relation_version_is_last":true,"title":["Na蒸気を利用したNaフラックス法によるGaN単結晶の育成"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T21:37:43.915521+00:00"}