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Semiconductor Interface Structure Studied by X-Ray Diffraction(Interfaces by various techniques)
https://doi.org/10.50974/00043818
https://doi.org/10.50974/0004381892f37a93-a056-4780-83ea-6ff40bf4f354
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00004200855.pdf (523.5 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2008-05-02 | |||||
| タイトル | ||||||
| タイトル | Semiconductor Interface Structure Studied by X-Ray Diffraction(Interfaces by various techniques) | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | X-ray diffraction | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | interface | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | semiconductor | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| ID登録 | ||||||
| ID登録 | 10.50974/00043818 | |||||
| ID登録タイプ | JaLC | |||||
| 著者 |
Akimoto, Koichi
× Akimoto, Koichi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Semiconductor interface structures have been studied by employing the technique of grazing incidence X-ray diffraction (GID) with the use of synchrotron radiation. Multiple-wavelength anomalous dispersion (MAD) method, a powerful direct method, has been modified and applied for the first time to an interface. This allows us to separate heavy and light atoms in a model-independent fashion and so deduce the structure. Of the numerous √<3> structures, only boron induced √<3> structure has been observed in the buried interface. MAD method has been applied to the Si/B√<3>/GeSi(111) interface structure and direct evidence for ordering of the Ge and Si atoms at this interface has been obtained. Specially, it has been found that boron lies in a substitutional site surrounded by four nearest-neighbor Si atoms with Ge in the other sites. In order to study the stress at the SiO_2/Si interface, the X-ray intensity of the silicon substrate 311 reflection in an extremely asymmetric scheme of small incident angle and large exit angle has been measured for various silicon oxide thickness. X-ray rocking curve studies reveal that silicon substrate lattice is highly stressed even in the thin-SiO_2/Si interface. | |||||
| 書誌情報 |
Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy 巻 44, 号 2, p. 195-199, 発行日 1997-03-31 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00408808 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00836167 | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application/pdf | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | Tohoku University | |||||
| 資源タイプ | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 紀要類(bulletin) | |||||
| 登録日 | ||||||
| 日付 | 2008-05-02 | |||||
| 日付タイプ | Created | |||||
| 公開日（投稿完了日） | ||||||
| 日付 | 2008-05-02 | |||||
| 日付タイプ | Created | |||||
| 発行日 | ||||||
| 日付 | 1997-03-31 | |||||
| 日付タイプ | Created | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 523508 bytes | |||||
| 更新日 | ||||||
| 日付 | 2010-01-27 | |||||
| 日付タイプ | Created | |||||
