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Na蒸気を利用したNaフラックス法によるGaN単結晶の育成
http://hdl.handle.net/10097/40572
http://hdl.handle.net/10097/40572a594eb78-625c-4641-882a-51191519334a
名前 / ファイル | ライセンス | アクション |
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KJ00005127605.pdf (1.1 MB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2010-02-05 | |||||
タイトル | ||||||
タイトル | Na蒸気を利用したNaフラックス法によるGaN単結晶の育成 | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | GaN | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Crystal growth | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | seeded growth | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Na flux method | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Na vapor | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
著者 |
山田, 高広
× 山田, 高広× 山根, 久典 |
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著者(ヨミ) | ||||||
姓名 | YAMADA, TAKAHIRO | |||||
著者(ヨミ) | ||||||
姓名 | YAMANE, HISANORI | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | GaN single crystals were grown by heating a Ga melt in Na vapor at 720-800℃ and 5MPa of N_2 for 8-200h. The Ga melt absorbed Na from the vapor and formed a Na-Ga melt. Transparent prismatic GaN single crystals grew spontaneously from the wall of a boron nitride crucible in the melt. The size of the prismatic GaN single crystals obtained at 800℃ was 1.0-3.0mm long and 0.3-1.0mm wide. Full-width at half maximum (FWHM) of the X-ray rocking curve measured for (10.0) reflection of prismatic crystals was 24 arcsec. Seeded growth of GaN single crystals was performed at 780℃ and N_2 pressure of 5MPa by the Na flux method with Na vapor. Transparent crystals were grown on prismatic GaN seed crystals in a Na-Ga melt with a low Na fraction, in which spontaneous nucleation of GaN was inhibited. The thickness of the crystals grown on the seeds by heating for 400 h was approximately 150μm in the directions perpendicular to the prismatic and pyramidal planes, implying the growth rate of 0.4μm/h at least. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 報文 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Original Paper | |||||
書誌情報 |
東北大学多元物質科学研究所素材工学研究彙報 巻 63, 号 1/2, p. 6-12, 発行日 2008-03-01 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1348-4052 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11795764 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
その他の言語のタイトル | ||||||
その他のタイトル | Crystal Growth of GaN by the Na Flux Method Using Na Vapor | |||||
出版者 | ||||||
出版者 | 東北大学多元物質科学研究所素材工学研究棟 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | 紀要類 (bulletin) | |||||
登録日 | ||||||
日付 | 2010-02-05 | |||||
日付タイプ | Created | |||||
公開日(投稿完了日) | ||||||
日付 | 2010-02-05 | |||||
日付タイプ | Created | |||||
発行日 | ||||||
日付 | 2008-03-01 | |||||
日付タイプ | Created | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | 1077718 bytes | |||||
公開範囲 | ||||||
値 | 学外 | |||||
著者所属 | ||||||
東北大学多元物質科学研究所 / 東北大学多元物質科学研究所 | ||||||
更新日 | ||||||
日付 | 2010-05-25 | |||||
日付タイプ | Created |